A new method for estimating the diffusivities of vacancies in passive films
A new method for estimating the diffusivities of vacancies in passive films
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DOI：
10.1016/0013-4686(95)00312-6
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发表时间：
1996-04
影响因子：
6.6
通讯作者：
E. Sikora;J. Sikora;D. Macdonald
中科院分区：
文献类型：
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作者：
E. Sikora;J. Sikora;D. Macdonald
使用莫特-肖特基 (M-S) 分析与钝化膜的点缺陷模型 (PDM) 相结合，我们确定了环境温度下磷酸 (pH = 0.96) 溶液中钨上形成的 WO3−x 钝化膜中的氧空位扩散系数。 Dois 获得的值范围为 (3.7–5.3)× 10−15cm2s。该值是从施主密度与成膜电压之间的指数关系中提取的，假设靠近金属/薄膜界面的薄膜中的耗尽区主导半导体特性。
Using Mott-Schottky (M-S) analysis in conjunction with the Point Defect Model (PDM) for passive films, we have determined the oxygen vacancy diffusion coefficient in the WO3−xpassive film formed on tungsten in phosphoric acid (pH = 0.96) solution at ambient temperature. The value obtained for Dois in the range (3.7–5.3)× 10−15cm2s.This value was extracted from the exponential relationship between the donor density and the film formation voltage assuming that the depletion region in the film close to the metal/film interface dominates the semiconductor properties.