Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.
Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.
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DOI：
10.1002/smll.202305865
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发表时间：
2023-10
期刊：
影响因子：
13.3
通讯作者：
Mustaqeem Shiffa;Benjamin T Dewes;J. Bradford;Nathan D Cottam;Tin S. Cheng;Christopher J. Mellor
中科院分区：
文献类型：
--
作者：
Mustaqeem Shiffa;Benjamin T Dewes;J. Bradford;Nathan D Cottam;Tin S. Cheng;Christopher J. Mellor
2D半导体（2SEM）可以改变许多行业，从信息和通信技术到医疗保健。迄今为止，自上而下的方法来制造它们，例如通过“透明胶带”剥离大块晶体，被广泛使用，但对于功能和可扩展性的精确工程具有有限的前景。在这里，基于外延的自下而上技术被用来展示基于宽带隙硒化镓（GaSe）化合物的高质量、晶圆级2SEM。良好定义的厚度的硒化镓层开发使用定制的设施的外延生长和原位研究的2SEM。通过理论和实验验证了占主导地位的中心对称性和堆叠的各个货车德瓦尔斯层;它们在紫外光谱中的光学各向异性和共振吸收被利用在技术UV-C光谱范围内的光子传感，提供了一个可扩展的深紫外光电子学的路线。
2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top-down approaches to their fabrication, such as exfoliation of bulk crystals by "scotch-tape," are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom-up technique based on epitaxy is used to demonstrate high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well-defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV-C spectral range, offering a scalable route to deep-UV optoelectronics.