Characteristics of highly sensitive pH sensors with charge accumulation operation
Characteristics of highly sensitive pH sensors with charge accumulation operation
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DOI：
10.1143/jjap.45.9259
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发表时间：
2006-12-01
期刊：
影响因子：
--
通讯作者：
Ishida, Makoto
中科院分区：
文献类型：
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作者：
Hizawa, Takeshi;Sawada, Kazuaki;Ishida, Makoto
通过电荷积累操作的电荷转移型pH传感器被证明，它被证实，其pH灵敏度为1130 mV/pH与5个信号积分周期。最常见的使用半导体的pH传感器是离子敏感场效应晶体管（ISFET）。我们的pH传感器的灵敏度比ISFET的灵敏度高20倍。在结构上类似于金属-绝缘体-半导体（MIS）结构的ISFET的灵敏度受到能斯特方程（室温下为59 mV/pH）的限制。当pH变化变小时，ISFET的输出信号消失在其噪声中。电荷转移型pH传感器增加pH输出信号以在时域中对无噪声的信号进行积分。预期使用该传感器可以测量小的pH信号变化。
A charge-transfer-type pH sensor operated by charge accumulation was demonstrated, and it was confirmed that its pH sensitivity was 1130 mV/pH with five signal integration cycles. The most familiar pH sensor using a semiconductor is the ionsensitive field effect transistor (ISFET). The sensitivity of our pH sensor was 20 times higher than that of the ISFET. The sensitivity of the ISFET, which is similar in structure to a metal-insulator-semiconductor (MIS) structure, is restricted by the Nernst equation (59 mV/pH at room temperature). The output signal from an ISFET disappears into its noise as pH variation becomes small. The charge-transfer-type pH sensor increases the pH output signal to integrate signals in the time domain that are noise-free. It is expected that with this sensor it is possible to measure small pH signal variations.