Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots.
Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots.
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DOI：
10.1038/nmat2716
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发表时间：
2010-04
期刊：
影响因子：
41.2
通讯作者：
F. Xiu;Yong Wang;Jiyoung Kim;A. Hong;Jianshi Tang;A. Jacob;J. Zou;Kang L. Wang
中科院分区：
文献类型：
--
作者：
F. Xiu;Yong Wang;Jiyoung Kim;A. Hong;Jianshi Tang;A. Jacob;J. Zou;Kang L. Wang
电场操纵铁磁性具有开发新一代电子器件的潜力，以解决当今微电子工业中的功耗和可变性问题。在各种稀磁半导体（dms）中，Si和Ge等群元素与传统的互补金属氧化物半导体（MOS）技术具有良好的相容性，是理想的候选材料。本文首次成功合成了室温以上铁磁有序的自组装稀磁mn0.05 ge0.95量子点，并演示了在100k的MOS铁磁电容器中电场对铁磁的控制。我们发现，在MOS栅极结构上施加电场，可以通过改变量子点内部的空穴浓度来有效地调制通道层的铁磁性。我们的研究结果对于理解和实现高效ge基自旋场效应晶体管具有重要意义。
Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in today’s microelectronics industry. Among various dilute magnetic semiconductors (DMSs), groupIVelements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal–oxide–semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn0.05Ge0.95quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100 K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration inside the quantum dots. Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors.