Photoluminescence analysis of Er‐doped GaAs under host photoexcitation and direct intra‐4f‐shell photoexcitation
Photoluminescence analysis of Er‐doped GaAs under host photoexcitation and direct intra‐4f‐shell photoexcitation
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主体光激发和直接 4f 壳内光激发下 Er 掺杂 GaAs 的光致发光分析
DOI：
10.1063/1.359684
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发表时间：
1995
影响因子：
3.2
通讯作者：
A. Taguchi
中科院分区：
文献类型：
--
作者：
K. Takahei;A. Taguchi
当晶体通过金属有机化学气相沉积与有意的氧共掺杂生长时，Er掺杂的GaAs在宿主光激发下显示出Er 3+离子的尖锐且简单的4f-壳层内发光光谱。然而，通过直接4f-壳层内激发的光致发光-激发测量显示，在同一晶体中存在多种Er 3+中心。为了澄清这些Er中心之间的差异，在宿主光激发和直接4f壳层内光激发下测量光致发光。结果表明，Er中心有三种类型，具有明显不同的特征。第一种类型的Er中心在宿主光激发下显示出高强度的尖锐而简单的光致发光谱。该中心被指定为与两个氧原子耦合的Er原子（ErGa-2 O中心）。第二种类型的Er中心显示出尖锐和简单的光谱，但仅在直接的4f壳层内光激发下，而不是在宿主光激发下。在样本中...
Er‐doped GaAs shows a sharp and simple intra‐4f‐shell luminescence spectrum of Er3+ ions under host photoexcitation, when the crystal is grown with deliberate oxygen codoping by metalorganic chemical‐vapor deposition. Photoluminescence‐excitation measurements by direct intra‐4f‐shell excitation, however, revealed that there are many kinds of Er3+ centers in the same crystal. To clarify the differences between these Er centers, photoluminescence was measured under both host photoexcitation and direct intra‐4f‐shell photoexcitation. It was found that there are three types of Er centers with distinctly different characteristics. The first type of Er center shows a sharp and simple photoluminescence spectrum with a high intensity under host photoexcitation. This center had been assigned as an Er atom coupled with two oxygen atoms (ErGa–2O center). The second type of Er center show sharp and simple spectra but only under direct intra‐4f‐shell photoexcitation and not under host photoexcitation. In a sample with...