Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase
Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase
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图像转换器光电探测器的开发：气相硒掺杂硅
DOI：
10.1134/s1063782608040131
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发表时间：
2008
期刊：
影响因子：
0.7
通讯作者：
A. Makhova
中科院分区：
文献类型：
--
作者：
Y. Astrov;V. Shuman;A. Lodygin;L. Portsel;A. Makhova
使用“半导体光电探测器+气体放电间隙”类型的图像转换器可以在IR光谱范围内进行高速记录过程。为了开发具有为此目的所需的性能的光电探测器，研究了硒蒸气压PSe对含硒单晶硅掺杂效率的影响。在1240°C的温度下，在PSe = 0.27-1.0大气压的压力范围内，通过扩散在密封的石英池中引入硒。掺杂的样品进行了研究，通过执行霍尔效应的温度测量。观察到引入的杂质中心浓度对PSe有很大的依赖性。结果发现，掺杂效果是相同的浮区熔化和直拉法生产的起始晶体。所获得的数据被用来制造光电探测器，可以采用在高速热成像与正在考虑的图像转换器的使用。
High-speed recording of processes in the IR spectral range can be carried out using image converters of the “semiconductor photodetector + gas discharge gap” type. To develop photodetectors with the properties required for this purpose, the effect of the selenium vapor pressure PSe on the doping efficiency of single-crystal silicon with selenium has been studied. Selenium was introduced by diffusion in sealed quartz cells at a temperature of 1240°C in the pressure range PSe = 0.27–1.0 atm. Doped samples were studied by performing temperature measurements of the Hall effect. A heavy dependence of the concentration of the impurity centers introduced on PSe was observed. It was found that the doping effect is the same for starting crystals produced by floating zone melting and by the Czochralski method. The data obtained were used to fabricate photodetectors that can be employed in high-speed thermography with the use of the image converters under consideration.