Effect of barrier process on electromigration reliability of Cu/porous low-k interconnects
Effect of barrier process on electromigration reliability of Cu/porous low-k interconnects
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DOI：
10.1063/1.2219003
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发表时间：
2006-07
影响因子：
3.2
通讯作者：
J. Pyun;W. Baek;J. Im;P. Ho;Larry Smith;K. Neuman;K. Pfeifer
中科院分区：
文献类型：
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作者：
J. Pyun;W. Baek;J. Im;P. Ho;Larry Smith;K. Neuman;K. Pfeifer
研究了采用传统预清洁优先工艺和先进势垒优先工艺的铜/Low-k互连的电迁移可靠性。与预清洁优先工艺相比，屏障优先工艺没有观察到非本征早期失效。这表明，在屏障优先工艺中，最有可能导致早期故障的工艺引起的缺陷显著减少。透射电子显微镜观察表明，与预清洁-优先工艺相比，势垒优先工艺的Ta势垒更均匀、更厚。这导致了更高的(JL)c产物，并相应地延长了EM寿命。此外，在势垒优先工艺过程中预沉积的Ta势垒保护了机械弱的低k电介质免受等离子体刻蚀的损害，并产生了均匀的通孔分布。相反，对于预清洁工艺，发现顶部的通孔开口大于底部的通孔开口。制服威盛的侧写是另一个优点...
Electromigration (EM) reliability of Cu/low-k interconnects with a conventional preclean-first process, and an advanced barrier-first process has been investigated. Compared with the preclean-first process, extrinsic early failures were not observed for the barrier-first process. This suggests that process-induced defects, which are the most probable cause for early failures, are significantly reduced for the barrier-first process. Transmission electron microscopy observation demonstrated a more uniform and thicker Ta barrier for the barrier-first process than the preclean-first process. This led to a higher (jL)c product, and prolonged the EM lifetime accordingly. In addition, a predeposited Ta barrier during the barrier-first process protected the mechanically weak low-k dielectrics from plasma etch damage, and a uniform via profile resulted. In contrast, the via opening at the top was found to be larger than that of at the via bottom for the preclean process. The uniform via profile is another advantag...