Strong Modulation of Optical Properties in Black Phosphorus through Strain-Engineered Rippling.
Strong Modulation of Optical Properties in Black Phosphorus through Strain-Engineered Rippling.
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DOI：
10.1021/acs.nanolett.5b04670
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发表时间：
2015-09
期刊：
影响因子：
10.8
通讯作者：
Jorge Quereda;P. San-Jose;V. Parente;Luis Vaquero-Garzon;A. Molina‐Mendoza;N. Agraït;G. Rubio‐Bollinger-G.-Rub
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文献类型：
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作者：
Jorge Quereda;P. San-Jose;V. Parente;Luis Vaquero-Garzon;A. Molina‐Mendoza;N. Agraït;G. Rubio‐Bollinger-G.-Rub
通过局部应变工程控制带隙是定制光电材料的一个令人兴奋的途径。二维晶体特别适合此目的，因为它们可以在破裂前承受前所未有的非均匀变形；人们可以将它们弯曲并折叠起来，就像一张纸一样。在这里，我们研究了承受周期性应力的多层黑磷片以调节其光电特性。我们发现在拉应力和压应力下的区域之间光学吸收带边缘发生了高达 ∼0.7 eV 的显着变化，大大超过了过渡金属二硫属化物报道的应变可调性。这一观察结果得到了理论模型的支持，该理论模型还预测这种周期性应力调制可以在低温下产生载流子的量子限制。在电荷载流子的局部密度中产生大的应变引起的变化的可能性为包括光伏、量子光学和二维光电器件在内的各种应用打开了大门。
Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented nonhomogeneous deformations before rupture; one can literally bend them and fold them up almost like a piece of paper. Here, we study multilayer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ∼0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models that also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics, and two-dimensional optoelectronic devices.