Deposition of single-crystal Ti2AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target
Deposition of single-crystal Ti2AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target
复制标题
DOI：
10.1063/1.2785958
复制
发表时间：
2007-10
影响因子：
3.2
通讯作者：
T. Joelsson;A. Flink;J. Birch;L. Hultman
中科院分区：
文献类型：
--
作者：
T. Joelsson;A. Flink;J. Birch;L. Hultman
在830°C下，采用双真空直流反应磁控溅射技术，在（111）取向的MgO衬底上制备了Ti2AlN（0001）单晶薄膜。研究了氮气分压变化对薄膜相组成的影响。从透射电子显微镜，X射线衍射和弹性反冲检测分析的结果表明，相对于放电中的氮含量的Ti2AlN MAX相的生长的窄区域。在氮耗尽时，过氧化物Ti3AlN和金属间化合物Ti3Al和TiAl相占主导地位。对于相对于Ti2AlN的过化学计量沉积条件，获得具有NaCl结构的TiN的相混合物。外延生长观察到的所有阶段的0001基面上的逐层模式。还观察到TiN相中的超结构，沿着[111]，重复距离为7.34 A，最有可能与Al偏析有关。纳米压痕测试表明，薄膜具有良好的力学性能。
Single-crystal Ti2AlN (0001) thin films were grown on (111) oriented MgO substrates kept at 830°C by ultrahigh vacuum dc reactive magnetron sputtering from a compound 2Ti:Al target in a mixed Ar∕N2 discharge. The effects of variations in the nitrogen partial pressure on the phase composition of the films were studied. Results from transmission electron microscopy, x-ray diffraction, and elastic recoil detection analysis show a narrow region for growth of Ti2AlN MAX phase with respect to the nitrogen content in the discharge. Perovskite Ti3AlN and intermetallic Ti3Al and TiAl phases dominate at nitrogen depletion. For overstoichiometric deposition conditions with respect to Ti2AlN, a phase mixture with NaCl-structured TiN is obtained. Epitaxial growth is observed with a layer-by-layer mode on the 0001 basal planes for all phases. A superstructure in the TiN phase is also observed along [111] with the repetition distance of 7.34A, most likely related to Al segregation. Nanoindentation shows that the film ha...