Analysis of Current-Voltage Characteristics of Organic Electroluminescent Devices on the Basis of Schottky Emission Mechanism
Analysis of Current-Voltage Characteristics of Organic Electroluminescent Devices on the Basis of Schottky Emission Mechanism
复制标题
基于肖特基发射机制的有机电致发光器件电流-电压特性分析
DOI：
10.1143/jjap.35.5735
复制
发表时间：
1996
影响因子：
1.5
通讯作者：
Takashi Kimura Takashi Kimura
中科院分区：
文献类型：
--
作者：
M. Matsumura;Yukitoshi Jinde;Tomonori Akai Tomonori Akai;Takashi Kimura Takashi Kimura
将氧化铟锡（ITO）电极的空穴注入有机电致发光（EL）器件的空穴输运层的机理归结为肖特基发射。在室温下，ITO/空穴输运层界面处的势垒高度约为0.39 eV，无场电流密度为7.1 ×10-2 Am-2。基于载流子注入机理分析了有机电致发光器件的电流-电压特性，发现具有有机双层结构的有机电致发光器件的电流受电极载流子注入特性的支配。通过与理论计算的I-V曲线的比较，得到了有机层中电势分布和载流子注入过程的有效介电常数的重要信息。
The mechanism of hole injection from the indium-tin-oxide (ITO) electrode into the hole-transporting layer of the organic electroluminescent (EL) device was concluded to be Schottky emission. The barrier height at the ITO/hole-transporting layer interface was determined to be about 0.39 eV and the field-free current density to be 7.1 ×10-2 Am-2 at room temperature. From the analysis of the current–voltage (I–V) characteristics of the organic EL devices on the basis of the carrier injection mechanisms, we found that the currents of the organic EL devices having the organic bilayer structure are governed by the properties of carrier injection from the electrodes. Important information on the potential distribution in the organic layers and the effective dielectric constant for the carrier injection processes were also acquired from the comparison of the I–V curves with the theoretical calculations.