XPS study of the chemical structure of the nickel/silicon interface. [X-ray Photoelectron Spectroscopy
XPS study of the chemical structure of the nickel/silicon interface. [X-ray Photoelectron Spectroscopy
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XPS 研究镍/硅界面的化学结构。
DOI：
10.1116/1.570618
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发表时间：
1980
期刊：
影响因子：
--
通讯作者：
J. Mayer
中科院分区：
文献类型：
--
作者：
P. Grunthaner;F. Grunthaner;J. Mayer
用X射线光电子能谱研究了Ni/Si、Ni/Ni_2Si和Si/Ni_2Si界面的化学性质。峰的位置，线的形状，和包络强度被用来探测这些系统的组成结构。采用了两种方法：一种方法是通过动态监测原位形成的Ni_2Si来检测前进的平面硅化物前沿。这样做的好处是可以检查一个真实的界面，该界面的任何一侧都被一个扩展的实体所限制。第二种方法如下的Si/Ni界面的发展，使用超高真空沉积的薄层Ni在Si上。^（4）He^+的背散射被用来跟踪薄膜反应的进程，并提供原子组成的定量信息。实验结果表明，Ni/Ni_2Si界面为富Ni的硅化物过渡相，而Si/Ni_2Si界面为富Si的过渡相。强度分析表明，这些界面区域对于α-Si衬底至少为22 A宽，对于晶体Si至少为9-14 A宽。所沉积的Ni/Si界面不能被描述为独特的单相，而是作为化学梯度过渡区域，其显示从富Si到富Ni的硅化物的组成变化。
The chemical nature of the Ni/Si, Ni/Ni_(2)Si and Si/Ni_(2)Si interfaces have been investigated using x‐ray photoelectron spectroscopy. Peak position, line shapes, and envelope intensities are used to probe the compositional structure of these systems. Two approaches have been employed: one approach examines the advancing planar silicide front by dynamically monitoring the in situ formation of Ni_(2)Si. This has the advantage of allowing examination of a realistic interface which is bounded on either side by an extended solid. The second approach follows the development of the Si/Ni interface using UHV depositions of thin layers of Ni on Si . ^(4)He^+ backscattering is used to follow the progression of the thin film reaction and to provide quantitative information on atomic composition. These experiments demonstrate that the Ni/Ni_(2)Si interface consists of a Ni‐rich silicide transitional phase while the Si/Ni_(2)Si interface shows a transitional structure which is correspondingly Si‐rich. Intensity analysis indicates that these interfacial regions are at least 22 A wide for α‐Si substrates and 9–14 A wide for crystalline Si. The as‐deposited Ni/Si interface cannot be described as a unique single‐phase, but rather as a chemically graded transitional region showing a composition which varies from Si‐rich to Ni‐rich silicides.