Fabrication of NaNbO3-(Ca0.5Sr0.5)ZrO3 antiferroelectric thin film by pulsed laser deposition
Fabrication of NaNbO3-(Ca0.5Sr0.5)ZrO3 antiferroelectric thin film by pulsed laser deposition
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脉冲激光沉积法制备NaNbO3-(Ca0.5Sr0.5)ZrO3反铁电薄膜
DOI：
10.1109/isaf51943.2021.9477378
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Wada Takahiro
中科院分区：
文献类型：
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作者：
Beppu Kosuke;Inoue Ryoma;Adachi Hideaki;Wada Takahiro
采用脉冲激光沉积法在（001）和（110）SrTiO 3单晶基片上成功制备了反铁电0.94NaNbO3-0.06（Ca0.5Sr0.5）ZrO 3薄膜。用（Ca0.5Sr0.5）ZrO 3部分取代NaNbO 3稳定了NaNbO 3的反铁电相。特别是在（001）SrTiO 3衬底上的0.94 NaNbO 3 -0.06（Ca 0.5Sr 0.5）ZrO 3薄膜中，观察到反铁电正交相c轴沿着面内和面外方向生长的两种畴。有人认为，这两个领域有助于展览的高超反铁电性的薄膜。
Antiferroelectric 0.94NaNbO3-0.06(Ca0.5Sr0.5)ZrO3films on (001) and (110) SrTiO3single crystal substrates were successfully fabricated by a pulsed laser deposition method. Partial substitution of NaNbO3with (Ca0.5Sr0.5)ZrO3stabilized antiferroelectric phase of NaNbO3. Especially, two types of domains, which c-axis of antiferroelectric orthorhombic phase grew along with in-plane and out-of-plane direction, were observed in the 0.94NaNbO3-0.06(Ca0.5Sr0.5)ZrO3film on (001) SrTiO3substrate. It was suggested that these two domains contribute the exhibition of superb antiferroelectricity in the film.