Tailoring the dielectric properties of HfO2-Ta2O5 nanolaminates
Tailoring the dielectric properties of HfO2-Ta2O5 nanolaminates
复制标题
DOI：
10.1063/1.115990
复制
发表时间：
1996-06-24
影响因子：
4
通讯作者：
Leskela, M
中科院分区：
文献类型：
--
作者：
Kukli, K;Ihanus, J;Leskela, M
电介质薄膜，例如，作为电致发光显示器件中的绝缘层，已经被研究。为了改善HfO2-Ta2O5的介电特性，采用325℃的原子层外延法制备了HfO2-Ta2O5纳米层材料。通过优化纳米层合结构的层厚，可以显著地改变纳米层合结构的介电性能，特别是泄漏电流密度。与单一氧化膜相比，最佳纳米层膜的电荷存储因子提高了8倍。通过x射线衍射分析，观察到单斜晶和亚稳晶的存在。(C) 1996年美国物理研究所。
Dielectric thin films applicable, for instance, as insulating layers in electroluminescent display devices have been studied. In order to improve dielectric characteristics HfO2-Ta2O5 nanolaminates were prepared by atomic layer epitaxy at 325 degrees C. The nanolaminates were evaluated in capacitance and current-voltage measurements. By optimizing the layer thicknesses in the nanolaminate structures the dielectric properties, especially leakage current densities, could be tailored remarkably. The best nanolaminates showed charge storage factors improved up to 8 times when compared with those of the single oxide films. The presence of nanosize crystallites of monoclinic and metastable tetragonal HfO2 was observed by x-ray diffraction analysis. (C) 1996 American Institute of Physics.