Wear Leveling for Crossbar Resistive Memory
Wear Leveling for Crossbar Resistive Memory
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DOI：
10.1145/3195970.3196138
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发表时间：
2018-06
期刊：
影响因子：
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通讯作者：
Wen Wen-Wen;Youtao Zhang;Jun Yang
中科院分区：
文献类型：
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作者：
Wen Wen-Wen;Youtao Zhang;Jun Yang
电阻式存储器（ReRAM）是一种新兴的非易失性存储器技术，与传统的DRAM相比具有许多优点。ReRAM交叉棒具有最小的4F2平面单元尺寸，因此被广泛用于构建大容量的密集存储器。然而，ReRAM横条受到大的潜流和红外下降的影响。为了确保写入可靠性，ReRAM写入驱动程序选择大于理想的写入电压，这会在运行时过度设置/过度重置许多单元，并导致芯片寿命严重降低。在本文中，我们提出了一种新的基于表的ram横梁磨损平衡方案XWL。研究了ReRAM交叉棒的写入寿命与电压应力的关系。通过在运行时估计和跟踪对不同行的有效写压力，XWL选择压力最大的行来减轻压力。我们的实验结果表明，平均而言，XWL使ReRAM交叉杆寿命比基线提高了324%，而性能开销仅为6.1%。
Resistive Memory (ReRAM) is an emerging non-volatile memory technology that has many advantages over conventional DRAM. ReRAM crossbar has the smallest 4F2 planar cell size and thus is widely adopted for constructing dense memory with large capacity. However, ReRAM crossbar suffers from large sneaky currents and IR drop. To ensure write reliability, ReRAM write drivers choose larger than ideal write voltages, which over-SET/over-RESET many cells at runtime and lead to severely degraded chip lifetime.In this paper, we propose XWL, a novel table based wear leveling scheme for ReRAM crossbars. We study the correlation between write endurance and voltage stress in ReRAM crossbar. By estimating and tracking the effective write stress to different rows at runtime, XWL chooses the ones that are stressed the most to mitigate. Our experimental results show that, on average, XWL improves the ReRAM crossbar lifetime by 324% over the baseline, with only 6.1% performance overhead.