Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching
Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching
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电子束光刻和湿法化学刻蚀制备 CdZnSe/ZnSe 量子点和量子线
DOI：
10.1116/1.588267
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发表时间：
1995
影响因子：
1.4
通讯作者：
G. Landwehr
中科院分区：
文献类型：
--
作者：
M. Illing;G. Bacher;T. Kümmell;A. Forchel;D. Hommel;B. Jobst;G. Landwehr
我们开发了一种多功能和低损伤的技术，以实现基于CdxZn 1 −xSe/ZnSe异质结构的量子点和量子线。电子束光刻用于图案定义。通过基于K2 Cr2 O 7：HBr：H2O溶液的湿法蚀刻工艺执行图案转移到半导体中。沿着晶面的优先蚀刻导致独立点和线结构的侧壁轮廓分明。已经实现了低至28 nm的点尺寸和低至13 nm的线尺寸。高的光致发光效率，即使在最窄的结构，允许横向限制效应的研究。我们观察到一个大小相关的蓝移高达20毫电子伏的光致发光发射光谱的croswest纳米结构。可以基于矩形横向势阱和结构的测量尺寸来对测量的能量偏移进行建模。
We have developed a versatile and low‐damage technology to realize quantum dots and quantum wires based on CdxZn1−xSe/ZnSe heterostructures. Electron beam lithography was used for pattern definition. The pattern transfer into the semiconductor was performed by a wet etch process based on a K2Cr2O7:HBr:H2O solution. Preferential etching along crystallographic planes leads to well‐defined sidewalls of the freestanding dot and wire structures. Dot sizes down to 28 nm and wire sizes down to 13 nm have been achieved. High photoluminescence efficiencies, even in the narrowest structures, allow the study of lateral confinement effects. We observe a size dependent blueshift of up to 20 meV in the photoluminescence emission spectrum of the narrowest nanostructures. The measured energy shifts can be modeled based on a rectangular lateral potential well and the measured sizes of the structures.