Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion
Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion
复制标题
基于等离子体刺激室温扩散将 Si、Mg 和 Ca 掺杂到 GaN 中
DOI：
10.1007/s00339-017-0989-z
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发表时间：
2017
影响因子：
2.7
通讯作者：
Qin G. G.
中科院分区：
文献类型：
--
作者：
Hou Ruixiang;Fang Xin;Li Lei;Li Shuti;Song Weidong;Xie Xixi;Xie Ziang;Xu Wanjing;Pan Shuan;Li Dan;Xiao Chijie;Qin G. G.
利用二次离子质谱仪(SIMS)研究表明，在室温(RT)条件下，GaN薄膜的表面密度很高，Si、Mg、Ca等杂质可以在不加任何外加偏压的情况下掺杂到厚度为10 nm的GaN薄膜中。无偏压等离子体掺杂(PDWOEB)的物理机制是等离子体激发的RT扩散，这与文献中称为等离子体浸没离子注入的外偏压等离子体掺杂方法有很大不同，其物理机制是低能离子注入。在功率为750W的等离子体作用2min后，用互补误差函数分布拟合SIMS浓度分布得到的GaN中Si、Mg和Ca的RT扩散系数分别为1.3E−15、1.9E−16和1.2E−16cm2/S。与文献报道的高温扩散系数的RT外推值相比，Si和Mg的RT扩散系数分别提高了18和22个数量级。
It is demonstrated by use of the secondary ion mass spectroscopy (SIMS) some impurities, including Si, Mg and Ca, can be doped into GaN films with depths of ten nanometer and quite high surface densities in plasma without any external bias at room-temperature (RT). The physical mechanism of plasma doping without any external bias (PDWOEB) is RT diffusion stimulated by the plasma, which is very different from that of the plasma doping method with an external bias, which was called plasma immersion ion implantation in literature, whose physical mechanism is low energy ion implantation. Stimulated by a plasma with power of 750 W in 2 min, the RT diffusion coefficients of Si, Mg and Ca in GaN obtained by fitting the complementary error function distribution with their SIMS concentration distributions are 1.3E−15, 1.9E−16 and 1.2E−16 cm2/s, respectively. The RT diffusion coefficients of Si and Mg have been enhanced 18 and 22 orders of magnitude, respectively, compared with the RT extrapolation values of the high temperature diffusion coefficients reported in literature.