Single-lobe, surface-normal beam surface emission from second-order distributed feedback lasers with half-wave grating phase shift
Single-lobe, surface-normal beam surface emission from second-order distributed feedback lasers with half-wave grating phase shift
复制标题
具有半波光栅相移的二阶分布式反馈激光器的单瓣、表面法向光束表面发射
DOI：
--
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
W. K. Chan
中科院分区：
文献类型：
--
作者：
G. Witjaksono;S. Li;Jaeseong Lee;D. Botez;W. K. Chan
在GaAs二阶光栅中心制作了半波相移，用于面发射水平腔半导体激光器（λ=0.98 μm）。在具有分布反馈（DFB）有源区和分布布拉格反射器（DBR）的二极管激光器中，发现这种光栅提供了表面法线，单瓣光束发射，正如理论预测的那样。采用InGaAs/AlGaAs/InGaP双量子阱结构。一个500 μ m长的半波相移GaAs/Au二阶光栅代表DFB区，它提供反馈和单向光输出耦合。500 μ m长的GaAs/SiO2/Au二阶光栅是DBR区，位于DFB区的两侧，提供频率选择反馈和单向外耦合。通过2.5 μ m宽的脊形波导实现了侧模控制。通过衬底n侧金属化层中80 μ m宽的窗口条纹获得表面发射。单频激光在正交…
Half-wave phase shifts were fabricated in the center of second-order GaAs gratings, for use in surface-emitting, horizontal-cavity, semiconductor diode lasers (λ=0.98 μm). Incorporating such gratings in diode lasers with distributed-feedback (DFB) active regions and distributed Bragg reflectors (DBRs) is found to provide surface-normal, single-lobe beam emission, as predicted by theory. InGaAs/AlGaAs/InGaP, two-quantum-well structures are employed. A 500-μm-long GaAs/Au second-order grating with half-wave phase shift represents the DFB region, which provides feedback and unidirectional light outcoupling. GaAs/SiO2/Au, 500-μm-long, second-order gratings are the DBR regions, on either side of the DFB region, which provide both frequency-selective feedback as well as unidirectional outcoupling. Lateral-mode control is achieved via a 2.5-μm-wide ridge waveguide. Surface emission is obtained through a 80-μm-wide window stripe in the metallization on the substrate n-side. Single-frequency lasing in an orthonorm...