Calculation of temperature effects on the equilibrium crystal shape of Si near (100).
Calculation of temperature effects on the equilibrium crystal shape of Si near (100).
复制标题
计算温度对 (100) 附近 Si 平衡晶形的影响。
DOI：
10.1103/physrevb.49.1919
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Tersoff
中科院分区：
文献类型：
--
作者：
Mukherjee;Pehlke;Tersoff
我们提出了一个统计模型的步骤曲折的小miscut邻Si（100）表面，推广到处理任意方位角。用转移矩阵法求解了该模型，计算了Si（100）面的自由能。由自由能导出了不同温度下的平衡晶形。结果与现有的实验数据进行了比较。
We present a statistical model of step meandering on small-miscut vicinal Si(100) surfaces, generalized to treat arbitrary azimuth. The model is solved using a transfer-matrix technique and the free energy of the vicinal Si(100) surface is calculated. From the free energy the equilibrium crystal shape is derived at various temperatures. The results are compared with existing experimental data.