Monte Carlo simulation of bulk hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x
Monte Carlo simulation of bulk hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x
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DOI：
10.1063/1.359052
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发表时间：
1995-01
影响因子：
3.2
通讯作者：
Marino J. Martinez;D. Look;J. Sizelove;F. Schuermeyer
中科院分区：
文献类型：
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作者：
Marino J. Martinez;D. Look;J. Sizelove;F. Schuermeyer
我们报道了AlxGa1−xAs， In1−xAlxAs和GaAsxSb1−x中空穴输运的蒙特卡罗研究。合金散射的影响在所有三种情况下都是显著的，但迁移率仍然足够高，在特定的器件应用中是有利的。我们通过玻尔兹曼输运方法分别计算了霍尔r因子，并表明这些因子在试图比较蒙特卡罗漂移迁移率与实验霍尔数据时至关重要。
We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data.