Defect-free InP nanowires grown in [001] direction on InP(001)
Defect-free InP nanowires grown in [001] direction on InP(001)
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DOI：
10.1063/1.1784548
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发表时间：
2004-09-13
影响因子：
4
通讯作者：
Wallenberg, LR
中科院分区：
文献类型：
--
作者：
Krishnamachari, U;Borgstrom, M;Wallenberg, LR
我们报道了在（001）InP衬底上用金属有机物气相外延直接生长[001] InP纳米线。通过扫描电子显微镜和透射电子显微镜的表征揭示了具有近正方形横截面和无堆垛层错的完美的锌包覆晶体结构的线。单[001]纳米线的光致发光测量在约1.4 eV处表现出窄而强的发射峰，而B生长的参考线在较低能量处显示出另外的宽发光峰。这种不常见的线生长方向[001]的起源进行了讨论，作为一种手段的[001]取向的纳米线（001）衬底上的控制形成。(C)2004年，美国物理学会。
We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.