Fundamentals, material properties and device performances in GaN MBE using on-surface cracking of ammonia
Fundamentals, material properties and device performances in GaN MBE using on-surface cracking of ammonia
复制标题
使用氨表面裂解的 GaN MBE 的基础知识、材料特性和器件性能
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
K. Ebeling
中科院分区：
文献类型：
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作者：
M. Kamp;M. Mayer;A. Pelzmann;K. Ebeling
研究了氨作为分子束外延生长第三族氮化物的氮源。采用表面裂解法，NH3直接在生长表面上裂解。通过这种技术，分子束外延成为金属有机物气相外延的有力竞争者。热力学计算以及实验结果揭示了对生长机制及其与传统等离子体方法的差异的见解。有了这些知识，同质外延GaN可以生长的记录线宽为0.5毫电子伏的光致发光（4 K）。c面蓝宝石上的GaN层也显示出合理的材料特性（光致发光线宽5 meV，n = 10 17 cm −3，μ m = 220 cm 2 /Vs）。除了GaN的生长，GaN的p-和n-掺杂以及三元氮化物的生长进行了讨论。使用所提出的氨方法，已经实现了在370 nm处发射的线宽窄至12 nm的UV-LED。
Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH 3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 10 17 cm −3 , μ ≈ 220 cm 2 /Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.