Improving the mobility of the amorphoussilicon TFT with the new stratified structure by PECVD
Improving the mobility of the amorphoussilicon TFT with the new stratified structure by PECVD
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利用PECVD新型分层结构提高非晶硅TFT的迁移率
DOI:
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发表时间:
2013
期刊:
影响因子:
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通讯作者:
Gu Zhihua
中科院分区:
文献类型:
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作者:
Yu Yao;Zhang Jing-Si;Chen Dai-Dai;Guo Ruiqian;Gu Zhihua