Design and characterization of adaptive microbolometers
Design and characterization of adaptive microbolometers
复制标题
自适应微测辐射热计的设计和表征
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
J. Talghader
中科院分区：
文献类型：
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作者：
W. Song;J. Talghader
我们报告的第一个实际结果的自适应微测辐射热计的设计和表征与热调谐响应。这种设备需要同时对包含环境温度和极热温度下的物体的场景进行成像。在高探测率状态下，微测辐射热计的操作类似于标准的商业设备。在低检测率状态下，使支撑梁的部分与衬底接触，这在逐像素的基础上使器件热短路。这是第一次，这一概念已实际实施的微测辐射热计设备架构，而不是简单的悬臂梁和板。最大驱动电压设置为17 V，典型器件的热导率、响应率和探测率可以在1.65 × 10−5 W K−1和2.99 × 10−4 W K−1之间切换超过一个数量级，分别在1.5 V W−1和0.2 V W−1之间以及1.8 × 106 cm Hz 1/2 W−1和1.5 × 105 cm Hz 1/2 W−1之间。这将器件的动态范围扩展了一个数量级以上。器件像素尺寸为100 µm ×100 µm。
We report the first practical results on design and characterization of adaptive microbolometers with a thermally tuned responsivity. Such devices are needed to simultaneously image scenes that contain objects at ambient and extremely hot temperatures. In the high detectivity state, the microbolometers are operated similar to standard commercial devices. In the low detectivity state, portions of the support beams are brought in contact with the substrate, which thermally shorts the devices on a pixel-by-pixel basis. This is the first time this concept has been practically implemented in a microbolometer device architecture as opposed to simple cantilever beams and plates. The maximum actuation voltage is set to 17 V, and the thermal conductances, responsivities and detectivities of a typical device can be switched more than an order of magnitude between 1.65 × 10−5 W K−1 and 2.99 × 10−4 W K−1, between 1.5 V W−1 and 0.2 V W−1 and between 1.8 × 106 cm Hz1/2 W−1 and 1.5 × 105 cm Hz1/2 W−1, respectively. This extends the dynamic range of the device more than an order of magnitude. The device pixel size is 100 µm ×100 µm.