Phonon-enhanced intraband transitions in InAs self-assembled quantum dots
Phonon-enhanced intraband transitions in InAs self-assembled quantum dots
复制标题
InAs自组装量子点中声子增强的带内跃迁
DOI：
10.1016/s0022-2313(99)00225-2
复制
发表时间：
2000
影响因子：
3.6
通讯作者：
Y. Masumoto
中科院分区：
文献类型：
--
作者：
A. Baranov;V. Davydov;H. Ren;S. Sugou;Y. Masumoto
采用共振光致发光和高光谱分辨率的光致发光激发实验相结合的方法，研究了InAs/GaAs自组装量子点中声子介导的带内载流子弛豫.声子相关的共振被发现占主导地位的发光和激发光谱。1 LO-声子峰的光谱宽度是令人惊讶的小，并与量子点中的LO声子的逆寿命相当，而多声子共振更广泛，最有可能反映了n-声子态密度的宽度。
Phonon-mediated intraband carrier relaxation was studied in InAs/GaAs self-assembled quantum dots (QDs) by combining resonant photoluminescence and photoluminescence excitation experiments with high spectral resolution. The phonon-related resonances were found to dominate both the luminescence and excitation spectra. Spectral widths of 1LO-phonon peaks are surprisingly small and comparable with the inverse lifetime of the LO phonons in QDs, whereas, the multiphonon resonances are much broader most likely reflecting the width of n-phonon density of states.