Maskless selective epitaxy of GaN by Ga low energy focused ion beam and dimethylhydrazine
Maskless selective epitaxy of GaN by Ga low energy focused ion beam and dimethylhydrazine
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Ga低能聚焦离子束和二甲肼对GaN进行无掩模选择性外延
DOI：
10.1116/1.591404
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发表时间：
2000
影响因子：
1.4
通讯作者：
K. Pak
中科院分区：
文献类型：
--
作者：
D. H. Cho;M. Tanaka;K. Pak
在这项研究中，我们介绍了一种新的氮化镓（GaN）生长方法，并分别以Ga低能量聚焦离子束（Ga- lefib）和二甲肼（DMHy） [(CH3)2N2H2]作为Ga和N源，在GaAs（100）衬底上实现了立方氮化镓的无掩膜选择性外延。同时提供入射能量为30-300 eV的Ga- lefib和DMHy，仅在聚焦的Ga离子束照射处选择性地生长GaN膜。我们发现GaN的生长强烈依赖于生长温度和DMHy压力，而GaAs（100）的表面氮化时间对晶体质量的影响很小。本实验获得的GaN的最佳生长条件为：生长温度为~ 610℃，DMHy压力为6.0×10−6 Torr，离子束入射能量为30 eV。
In this study, we introduced a new growth method of gallium nitride (GaN), and demonstrated maskless selective epitaxy of cubic GaN on GaAs (100) substrates using a Ga low energy focused ion beam (Ga-LEFIB) and dimethylhydrazine (DMHy) [(CH3)2N2H2] as Ga and N sources, respectively. A Ga-LEFIB with an incident energy of 30–300 eV and DMHy were supplied simultaneously, and GaN films were grown selectively only where the focused Ga ion beam was irradiated. We have found that GaN growth was strongly dependent on growth temperature and DMHy pressure, while surface nitridation time of GaAs (100) had little effect on crystalline quality. The optimized growth conditions of GaN obtained in this experiment were ∼610 °C growth temperature with a DMHy pressure of 6.0×10−6 Torr at an ion beam incident energy of 30 eV.