Freestanding GaN Resonant Gratings at Telecommunication Range
Freestanding GaN Resonant Gratings at Telecommunication Range
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DOI：
10.1109/lpt.2009.2024221
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发表时间：
2009-06
影响因子：
2.6
通讯作者：
Yongjin Wang;F. Hu;Masashi Wakui;K. Hane
中科院分区：
文献类型：
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作者：
Yongjin Wang;F. Hu;Masashi Wakui;K. Hane
我们从理论和实验上证明了一种独立的氮化镓（GaN）谐振光栅在电信范围内。采用严格耦合波分析方法，分析了独立GaN谐振光栅的光学响应。通过电子束光刻、快原子束刻蚀和深反应离子刻蚀的组合，在850 nm的独立膜上验证了独立GaN谐振光栅。这种独立的GaN谐振光栅的偏振特性在反射率测量中得到了证实，实验结果与理论模型吻合得很好。强共振峰显示出明显的占空比依赖于下的横向磁极化，和一个有前途的共振峰的制作的独立GaN谐振光栅，其中光栅周期P为1500 nm，光栅高度h为230 nm，光栅宽度为280 nm，观察到在1516.4 nm处的半高宽为4 nm。
We theoretically and experimentally demonstrate a freestanding gallium nitride (GaN) resonant grating at telecommunication range. The optical responses of the freestanding GaN resonant gratings are analyzed by the rigorous coupled-wave analysis method. The freestanding GaN resonant gratings are validated on 850-nm freestanding membrane by a combination of electron beam lithography, fast atom beam, etching, and deep reactive ion etching. The polarization properties of such freestanding GaN resonant gratings are demonstrated in reflectance measurements, and the experimental results correspond well to the theoretical model. The strong resonant peaks show a clear dependence on the duty ratio under transverse magnetic polarization, and a promising resonant peak of the fabricated freestanding GaN resonant grating, in which the grating period P is 1500 nm, the grating height h is 230 nm, and the grating width is 280 nm, is observed at 1516.4 nm with a full-width at half-maximum of 4 nm.