High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
复制标题
DOI：
10.1063/1.4993226
复制
发表时间：
2017-09-18
影响因子：
4
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Jung, Daehwan;Norman, Justin;Bowers, John E.
我们展示了使用分子束外延在同轴 (001) GaP/Si 衬底上外延生长的高效、低阈值 InAs 量子点激光器。电子通道对比成像测量显示，在 GaP/Si 上生长的优化 GaAs 模板的穿透位错密度为 7.3 x 10(6) cm(-2)。高质量的砷化镓模板使解理量子点激光器能够实现 9.5 mA 的室温连续波 (CW) 阈值电流、低至 132 A/cm(2) 的阈值电流密度、175 mW 的单侧输出功率以及 38.4% 的室温电插效率。解理后的 QD 激光器可在高达 80 摄氏度的温度下产生基态连续激光。在一个激光面上应用 95% 高反射率涂层后，连续波阈值电流为 6.7 mA，这是任何一种在硅上生长的法布里-珀罗激光器的最低值。由 AIP 出版社出版。
We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on onaxis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 x 10(6) cm(-2) from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm(2), a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 degrees C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si. Published by AIP Publishing.