A low specific on-resistance SOI MOSFET with dual gates and a recessed drain
A low specific on-resistance SOI MOSFET with dual gates and a recessed drain
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DOI：
10.1088/1674-1056/22/2/027304
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发表时间：
2013-02
影响因子：
1.7
通讯作者：
X. Luo;Luo Yinchun;Fan Ye;Gangyi Hu;Wang Xiaowei;Zhengyuan Zhang;Fan Yuanhang;Cai Jinyong;Pei Wang;K. Zhou
中科院分区：
文献类型：
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作者：
X. Luo;Luo Yinchun;Fan Ye;Gangyi Hu;Wang Xiaowei;Zhengyuan Zhang;Fan Yuanhang;Cai Jinyong;Pei Wang;K. Zhou
提出了一种低比导通电阻（罗恩，sp）的可集成SOI金属氧化物半导体场效应晶体管（MOSFET），并对其进行了模拟研究。MOSFET具有凹陷漏极以及双栅极，其由平面栅极和延伸到掩埋氧化物层（BOX）的沟槽栅极组成（DGRD MOSFET）。首先，双栅极形成双导电沟道，并且延伸的沟槽栅极还充当场板以改善电场分布。第二，沟槽栅和凹陷漏的结合拓宽了垂直导电区域，缩短了电流路径;第三，P型顶层不仅提高了漂移掺杂浓度，而且调制了表面电场分布。所有这些都大幅降低了罗恩，sp和保持高击穿电压（BV）。半单元间距为15 μm的DGRD MOSFET的BV为233 V，罗恩，sp为4.151 mΩ cm 2（VGS = 15 V）。在相同的BV下，与沟槽栅SOI MOSFET和传统MOSFET相比，DGRD MOSFET的罗恩、sp分别降低了36%和33%。延伸至BOX的沟槽栅极同时充当介电隔离沟槽，简化了制造工艺。
A low specific on-resistance (Ron,sp) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce Ron,sp and maintain a high breakdown voltage (BV). The BV of 233 V and Ron,sp of 4.151 mΩcm2 (VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes.