Surface Structures of Ag on Si (111) Surface Investigated by RHEED
Surface Structures of Ag on Si (111) Surface Investigated by RHEED
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RHEED 研究 Si (111) 表面 Ag 的表面结构
DOI：
10.1143/jjap.17.2097
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发表时间：
1978
影响因子：
1.5
通讯作者：
S. Ino
中科院分区：
文献类型：
--
作者：
Y. Gotoh;S. Ino
用RHEED研究了Ag蒸发引起的Si（111）表面结构。建立了薄膜表面结构随沉积厚度和退火温度变化的相图。在平均厚度为1 μ m的Ag蒸发后，当样品温度升高时，在290 ~ 660°C温度范围内出现了γ 3× γ 3（R 30°）结构，在600 ~ 700°C温度范围内出现了3×1结构。在显示3×1结构的样品冷却到220°C以下后，出现6×1结构。6×1结构的转变在220°C时完全可逆。这些表面结构出现或消失的临界温度与沉积厚度（0-3.0 μ m）略有关系。当沉积厚度小于0.8 μ m时，除了这些表面结构外，还出现了7×7结构。
The Si (111) surface structures induced by Ag evaporation have been investigated by RHEED. A phase diagram of the surface structures in relation of the deposition thickness and the annealing temperature has been established. When the specimen temperature was elevated after Ag evaporation of 1 Å in mean thickness, the √3×√3 (R 30°) structure appears in the range of temperature between 290 and 660°C, and the 3×1 structure appears between 600 and 700°C. After the specimen showing the 3×1 structure was cooled below 220°C, the 6×1 structure appears. The transformation of the 6×1 structure is perfectly reversible at 220°C. The critical temperatures at which these surface structures appear or disappear depend slightly on the deposition thickness (0–3.0 Å). If the deposition thickness is less then 0.8 Å, the 7×7 structure also appears in addition to these surface structure.