The effect of thermal annealing on impurity states in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase
The effect of thermal annealing on impurity states in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase
复制标题
热退火对铁电半导体TlGaSe2非公度相内杂质态的影响
DOI：
10.1088/0268-1242/21/2/013
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发表时间：
2006
影响因子：
1.9
通讯作者：
R. A. Suleymanov
中科院分区：
文献类型：
--
作者：
M. Seyidov;E. Coşkun;Y. Şahin;R. Khamoev;R. A. Suleymanov
研究了热退火对铁电半导体TlGaSe_2无公度相暗电导和热刺激电导的影响。结果表明，晶体在无公度相内退火几小时后，两种类型的电导率都发生了很大的变化。结果表明，退火的主要作用是杂质俘获截面的大幅度减小，导致弛豫时间的急剧增加。
The effect of thermal annealing on dark conductivity and thermally stimulated conductivity in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase is investigated. It is shown that both types of conductivities are drastically changed after annealing of the crystal for some hours within the incommensurate phase. The results obtained lead to the conclusion that the main effect of annealing is a large decrease of impurity capture cross sections leading to the dramatic increasing of relaxation times.