Deep X-ray lithography system with a uniform and high-accuracy fabrication area established in beamline BL11 at NewSUBARU.
Deep X-ray lithography system with a uniform and high-accuracy fabrication area established in beamline BL11 at NewSUBARU.
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NewSUBARU 的光束线 BL11 中建立了深度 X 射线光刻系统，具有均匀且高精度的制造区域。
DOI：
10.1107/s1600577518017939
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发表时间：
2019
影响因子：
2.5
通讯作者：
Y. Utsumi
中科院分区：
文献类型：
--
作者：
M. Takeuchi;A. Yamaguchi;Y. Utsumi
一种新的光刻系统，以制造高深宽比的3D微结构的开发在新SUBARU同步辐射设施（兵库大学，日本）。该系统产生的X射线束具有高平行度（水平和垂直发散角分别为278 µrad和14 µrad）和高光子通量（300 mA束流下为31 mW mm-2）。 验证了系统的高光子通量和曝光面积，并提出了一种具有均匀剂量分布的大曝光面积的束扫描方法。此外，深X射线光刻性能的特点是使用传统的光敏材料和同步辐射诱导的聚四氟乙烯（PTFE）的直接蚀刻进行了演示。在保证高均匀性的同时，实现了100 mm × 100 mm的微加工面积的扩大。
A new lithography system to fabricate high-aspect-ratio 3D microstructures was developed at the NewSUBARU synchrotron radiation facility (University of Hyogo, Japan). The X-ray beam generated by this system has high parallelism (horizontal and vertical divergence angles of 278 µrad and 14 µrad, respectively) and high photon flux (31 mW mm-2 at a beam current of 300 mA). The high photon flux and exposure area of the system were validated and a beam-scan method for a large exposure area with a uniform dose distribution has been proposed. In addition, the deep X-ray lithography performance was characterized using a conventional photosensitive material and the synchrotron-radiation-induced direct etching of polytetrafluoroethylene (PTFE) was demonstrated. An enlargement of the microfabrication area up to 100 mm × 100 mm while contemporarily ensuring high uniformity was achieved.