Trap profiles of projector based optoelectronic tweezers (OET) with HeLa cells
Trap profiles of projector based optoelectronic tweezers (OET) with HeLa cells
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DOI：
10.1364/oe.17.005232
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发表时间：
2009-03-30
期刊：
影响因子：
3.8
通讯作者：
Wu, Ming C.
中科院分区：
文献类型：
--
作者：
Neale, Steven L.;Ohta, Aaron T.;Wu, Ming C.
本文介绍了基于数据投影仪的光电镊子(OET)中HeLa电池的陷阱分布测量。数据投影仪作为光源照射非晶硅，形成虚拟电极，用于通过介电泳捕集颗粒。我们发现，尽管光斑边缘的陷阱硬度通常较大，但通过减小陷阱的大小，直到它与被捕获的物体相似，可以创建具有恒定陷阱硬度的陷阱。我们已经成功地为HeLa细胞制作了一种陷阱，它具有3x10(-6)Nm(-1)的恒定陷阱刚度(能够将细胞移动到50µms(-1))，并具有12微米直径的陷阱。我们还计算了细胞由于陷阱而经历的势垒的深度，发现它是1.6×10(-16)J(4x10(4)k(B)T)。(C)2009年美国光学学会
In this paper we present trap profile measurements for HeLa cells in Optoelectronic Tweezers (OET) based on a data projector. The data projector is used as a light source to illuminate amorphous Si creating virtual electrodes which are used to trap particles through dielectrophoresis. We show that although the trap stiffness is typically greater at the edges of the optical spot it is possible to create a trap with constant trap stiffness by reducing the trap's size until it is similar to the object being trapped. We have successfully created a trap for HeLa cells with a constant trap stiffness of 3x10(-6) Nm(-1) (capable of moving the cell up to 50 mu ms(-1)) with a 12 mu m diameter trap. We also calculate the depth of the potential well that the cell will experience due to the trap and find that it to be 1.6x10(-16) J (4x10(4) k(B)T). (C) 2009 Optical Society of America