Oxidation of silicon and silicon carbide in ozone-containing atmospheres at 973 K
Oxidation of silicon and silicon carbide in ozone-containing atmospheres at 973 K
复制标题
DOI：
10.1111/j.1151-2916.2002.tb00402.x
复制
发表时间：
2002-08
影响因子：
3.9
通讯作者：
T. Narushima;Michihisa Kato;Shingo Murase;C. Ouchi;Y. Iguchi
中科院分区：
文献类型：
--
作者：
T. Narushima;Michihisa Kato;Shingo Murase;C. Ouchi;Y. Iguchi
研究了硅片、化学气相沉积SiC和单晶SiC在973 K氧气- 2% - 7%臭氧混合气体中的氧化行为。用椭偏仪测量氧化过程中氧化膜的厚度。含臭氧大气中的氧化速率比纯氧大气中的氧化速率高得多。研究了硅和SiC的抛物型氧化动力学。抛物线速率常数随臭氧-气体分压呈线性变化。臭氧气体解离形成的氧原子通过SiO2膜向内扩散明显是一个速率控制过程。
The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO2 film apparently was the rate-controlling process.