Microchannel cooling strategies for high heat flux (1 kW/cm2) power electronic applications

Microchannel cooling strategies for high heat flux (1 kW/cm2) power electronic applications
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适用于高热通量 (1 kW/cm2) 电力电子应用的微通道冷却策略

DOI:
10.1109/itherm.2017.7992457
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发表时间:
2017
期刊:
2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
影响因子:
--
通讯作者:
K. Goodson
K. Goodson
中科院分区:
--
文献类型:
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作者:
K. Jung;Chirag R. Kharangate;Hyoungsoon Lee;J. Palko;Feng Zhou;M. Asheghi;E. Dede;K. Goodson

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宽带隙(WBG)半导体电子器件(例如碳化硅(SiC)和氮化镓(GaN))在电力电子应用中变得越来越受欢迎,这是因为与Si器件相比,它们在更高的工作温度、功率、频率和高辐射环境下具有优异的功能。然而,对更高器件和封装密度的持续驱动已经导致了大约1 kW/cm 2的极端热通量,这需要积极的微通道冷却策略,以便将器件结温保持在可接受的极限以下。为了研究微通道几何参数、封装材料和流体流动条件对各种冷却策略的冷却性能的影响,建立了一个降阶的单/两相热流体模型。水和R245 fa制冷剂分别用作单相和两相工作流体。我们考虑了三种冷却策略:·设计A:铜冷板微通道模块结合到器件衬底·设计B:嵌入式微通道直接蚀刻到器件衬底中,以及·设计C:嵌入式微通道具有带有入口和出口模块的3D歧管。所提出的嵌入式微通道与三维歧管与R245 fa工作流体具有实现最低的热阻<$0.07 K/W和压降<$10 kPa的流量Q <$0.21 l/min(Tin = 90 °C)和出口质量x = 0.44的潜力。
The wide band-gap (WBG) semiconductor electronics such as silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular in power electronics applications due to their excellent functionality at higher operating temperatures, powers, frequencies and in high radiation environments compared to Si devices. However, the continued drive for higher device and packaging densities has led to extreme heat fluxes on the order of 1 kW/cm2 that requires aggressive microchannel cooling strategies in order to maintain the device junction temperature below acceptable limits. A reduced order single/two phase thermal-fluidic model is developed to investigate the effect of micro-channel geometry parameters, packaging materials and fluid flow conditions on the cooling performance of various cooling strategies. Water and R245fa refrigerant are used as single- and two-phase working fluids, respectively. We consider three cooling strategies: • Design A: copper cold-plate micro-channel module bonded to the device substrate • Design B: embedded micro-channels directly etched into the device substrate and • Design C: embedded micro-channels with a 3D manifold with inlet and outlet module. The proposed embedded micro-channels with 3D-manifold with R245fa working fluid has the potential to achieve the lowest thermal resistance ∼0.07 K/W and pressure drop ∼10 kPa for flow rate Q ∼ 0.21 l/min (Tin = 90 °C) and exit quality x = 0.44.