Error modelling of quantum Hall array resistance standards
Error modelling of quantum Hall array resistance standards
复制标题
量子霍尔阵列电阻标准的误差建模
DOI：
10.1088/1681-7575/aaa5c1
复制
发表时间：
2018
期刊：
影响因子：
2.4
通讯作者：
and Nobu-Hisa Kaneko
中科院分区：
文献类型：
--
作者：
Martina Marzano;Takehiko Oe;Massimo Ortolano;Luca Callegaro;and Nobu-Hisa Kaneko
量子霍尔阵列电阻标准（QHARS）是由互连的量子霍尔效应元件组成的集成电路，允许实现几乎任意的电阻值。近年来，提出了有效设计QHARS网络的技术。一个开放的问题是，一个QHARS，这是受接触和导线电阻的准确性的评价。在这项工作中，我们提出了一个通用的和系统的QHARSs，这是基于现代电路分析技术和蒙特卡罗评估的不确定性的误差建模过程。作为一个实例，本文将这种分析方法应用于日本国家计量研究所研制的1M Ω QHARS的特性分析。提供软件工具以将该程序应用于其他阵列。
Quantum Hall array resistance standards (QHARSs) are integrated circuits composed of interconnected quantum Hall effect elements that allow the realization of virtually arbitrary resistance values. In recent years, techniques were presented to efficiently design QHARS networks. An open problem is that of the evaluation of the accuracy of a QHARS, which is affected by contact and wire resistances. In this work, we present a general and systematic procedure for the error modelling of QHARSs, which is based on modern circuit analysis techniques and Monte Carlo evaluation of the uncertainty. As a practical example, this method of analysis is applied to the characterization of a 1 MΩ QHARS developed by the National Metrology Institute of Japan. Software tools are provided to apply the procedure to other arrays.