Effect of sputtered Mo interlayers on Si (100) substrates for the deposition of diamond film by hot filament chemical vapor deposition
Effect of sputtered Mo interlayers on Si (100) substrates for the deposition of diamond film by hot filament chemical vapor deposition
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Si(100)基体上溅射Mo中间层对热丝化学气相沉积金刚石膜的影响
DOI：
10.1016/j.surfcoat.2013.06.002
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发表时间：
2013-10
影响因子：
5.4
通讯作者：
Yu, Z. M.
中科院分区：
文献类型：
--
作者：
Li, Jie;Zhang, D.;Li, Zhou;Yu, Z. M.
采用热灯丝化学气相沉积（HFCVD）方法，在溅射Mo夹层的Si（100）衬底上仅用20 min即可生长出致密、超光滑、分布均匀的纳米金刚石薄膜。为了研究Mo中间层对CVD金刚石膜生长的影响，将每个衬底安装在HF-衬底间隔的范围内，df。空间分辨扫描电子显微镜（SEM），原子力显微镜（AFM），拉曼光谱，X射线衍射（XRD），二次离子质谱（西姆斯）和聚焦离子束（FIB）研磨的沉积材料提供了一个详细的关系的演变的薄膜形态，生长速率，表面粗糙度，晶粒尺寸，sp3/sp2含量和阶段与鳍沉积样品。沉积的金刚石膜没有内应力。溅射Mo基片上金刚石的成核密度在金刚石粉预处理后大于1014/m2，比块体Mo基片上的1011/m2有了显著的提高。文中详细讨论了改进的原因。这种方法可以是一种潜在的方法，以生产超光滑的纳米金刚石的各种应用。而且，金刚石的生长时间可以大大缩短。
Dense, ultra-smooth and well-distributed nanocrystalline diamond films have been grown by hot filament chemical vapor deposition (HFCVD) on Si (100) substrates with a sputtered Mo interlayer in only 20 min. In order to investigate the effect of a Mo interlayer on the growth of CVD diamond films, each substrate was mounted over a range of HF-substrate separations,df. Spatially resolved scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and focused ion beam (FIB) milling of the deposited material provide a detailed relation of the evolution of film morphology, growth rate, surface roughness, grain size, sp3/sp2content and phases withdfin deposited samples. The deposited diamond film shows no internal stress. It is also found that the diamond nucleation density on sputtered Mo substrate after diamond powder pretreatment is more than 1014/m2, which is a remarkable improvement compared with 1011/m2on bulk Mo substrate. The reason for the improvement is discussed in detail. This method can be a potential way to produce ultra-smooth nano-crystalline diamond for various applications. Also, the growth time of diamond can be greatly reduced.
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影响因子：
5.4
作者：
M. Amaral;F. A. Almeida;A. Fernandes;F. Costa;F. Oliveira;Rui F. Silva
通讯作者：
M. Amaral;F. A. Almeida;A. Fernandes;F. Costa;F. Oliveira;Rui F. Silva
影响因子：
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作者：
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影响因子：
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作者：
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通讯作者：
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影响因子：
5.4
作者：
Ahmed, Furqan;Durst, Karsten;Goeken, Mathias
通讯作者：
Goeken, Mathias
影响因子：
4.1
作者：
S. Mikhailov;D. Ariosa;J. Weber;Y. Baer;W. Hänni;X.-M. Tang;P. Alers
通讯作者：
S. Mikhailov;D. Ariosa;J. Weber;Y. Baer;W. Hänni;X.-M. Tang;P. Alers