Kinetics of silica precipitation on quartz seeds at 200–300 °C
Kinetics of silica precipitation on quartz seeds at 200–300 °C
复制标题
200–300 °C 石英晶种上二氧化硅沉淀的动力学
DOI：
10.1134/s0016702909070076
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发表时间：
2009
影响因子：
0.8
通讯作者：
N. P. Starshinova
中科院分区：
文献类型：
--
作者：
V. A. Alekseyev;L. S. Medvedeva;N. P. Starshinova
我们在 150 ℃ 下进行的实验首次表明，通过去除尘状颗粒和表面缺陷，石英晶种上的二氧化硅沉淀显着减慢 [1]。减速太强以至于我们无法测量二氧化硅沉淀的速率。这种测量是在 200 ë 的高温下进行的，二氧化硅沉淀速率似乎比石英溶解速率低三个数量级 [2]。这种差异意味着溶解和沉淀反应的微观可逆性原理不适用[3]。本文报道了在 250 和 300 ë 下获得的类似结果。所有这些数据都用于估计二氧化硅从溶液中沉淀的速率的温度依赖性。
Our experiments at 150 showed, for the first time, that silica precipitation on quartz seeds is significantly decelerated by the removal of dustlike particles and surface defects [1]. The deceleration was so strong that we failed to measure the rate of silica precipitation. Such measurements were conducted at a high temperature of 200 ë, and the rate of silica precipitation appeared to be three orders of magnitude lower than the rate of quartz dissolution [2]. Such a discrepancy implies that the principle of the microscopic reversibility of dissolution and precipitation reactions is inapplicable [3]. This paper reports similar results obtained at 250 and 300 ë. All these data were used to estimate the temperature dependence of the rate of silica precipitation from solutions.