Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation
Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation
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DOI：
10.7567/jjap.57.02ba04
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发表时间：
2018-02-01
影响因子：
1.5
通讯作者：
Yanagimachi, Shinya
中科院分区：
文献类型：
--
作者：
Takagi, Hideki;Kurashima, Yuichi;Yanagimachi, Shinya
研究了高纯度惰性气体环境中硅和蓝宝石晶片的表面激活室温键合。虽然表面活化键合主要在高真空中进行，但硅片和蓝宝石晶片在高达 90 kPa（接近大气压）的 Ar 气体环境中成功键合。切割测试证明，在Ar气环境中制备的键合强度足以用于MEMS封装，尽管与真空中制备的键合强度相比略有下降。透射电镜观察表明，Ar气气氛下制备的键合界面与真空中制备的键合界面几乎相同。这意味着键合环境中的Ar原子不会阻碍键合界面处原子间键的形成。气体环境中的室温键合可实现 MEMS 器件的密封封装，例如惯性传感器、MEMS 开关以及用于 MEMS 原子钟的 Cs 蒸汽室在各种压力下的密封封装。 (C) 2018 日本应用物理学会
Surface activated room-temperature bonding of Si and sapphire wafers in high-purity inert gas ambient was examined. Although surface activated bonding has been mainly performed in high vacuum, Si and sapphire wafers were successfully bonded in Ar gas ambient up to 90 kPa, which is almost atmospheric pressure. The dicing test proved that the bonding prepared in Ar gas ambient was strong enough for MEMS packaging, although the bonding strength was slightly decreased compared with that prepared in vacuum. Transmission electron microscope observation revealed that the bonding interface prepared in Ar gas ambient is almost the same as that prepared in vacuum. It means that Ar atoms in the bonding ambient do not hamper the interatomic bond formation at the bonding interface. Room-temperature bonding in gas ambient enables hermetic packaging of MEMS devices, such as inertia sensors, MEMS switches, and Cs vapor cells for MEMS atomic clocks at various pressures. (C) 2018 The Japan Society of Applied Physics