Peak‐to‐valley ratio of small resonant‐tunneling diodes with various barrier‐thickness asymmetries
Peak‐to‐valley ratio of small resonant‐tunneling diodes with various barrier‐thickness asymmetries
复制标题
具有各种势垒厚度不对称性的小型谐振隧道二极管的峰谷比
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
H. Lüth
中科院分区：
文献类型：
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作者：
T. Schmidt;M. Tewordt;R. Haug;K. Klitzing;B. Schönherr;P. Grambow;A. Förster;H. Lüth
通过小的双势垒异质结构的共振隧穿研究依赖于量子阱中的电荷积累和器件直径。该研究包括一系列具有四种不同势垒厚度比和直径在300 nm至10 μm之间的共振隧穿二极管。特别强调的是共振隧穿电流峰值的峰谷比，对于弱电子积累，峰谷比随着器件直径的减小而急剧下降，而在强充电情况下，峰谷比与尺寸无关。
Resonant tunneling through small double‐barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant‐tunneling diodes with four different barrier‐thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak‐to‐valley ratio of the resonant‐tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong‐charging case.