Defect-related anomalous low-frequency Raman scattering in a few-layered MoS2
Defect-related anomalous low-frequency Raman scattering in a few-layered MoS2
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DOI：
10.35848/1882-0786/ab9a91
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发表时间：
2020-06
影响因子：
2.3
通讯作者：
Rhea Thankam Sam;T. Umakoshi;P. Verma
中科院分区：
文献类型：
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作者：
Rhea Thankam Sam;T. Umakoshi;P. Verma
MoS2作为纳米电子器件中的活性介质，因其优异的光电性能而备受关注。然而，设备性能受到缺陷的限制，这需要进行彻底的调查。虽然传统形式的拉曼光谱是研究缺陷的最佳技术之一，但它对某些类型的缺陷不敏感。在这里，我们利用低频拉曼散射，并报告其异常行为，可以链接到缺陷。这项工作建立了低频拉曼模式作为唯一的工具，调查缺陷和层变形，是无法检测到的常规拉曼模式。
MoS2 has received much attention as an active medium in many nanoelectronic devices for its excellent optoelectronic properties. However, the device performance is limited by the presence of defects, which calls for a thorough investigation. While the conventional form of Raman spectroscopy is one of the best techniques to study defects, it is insensitive to certain types of defect. Here, we utilize low-frequency Raman scattering and report its anomalous behavior that can be linked to defects. This work establishes the low-frequency Raman modes as the only tool to investigate defects and layer deformation that are not detectable by conventional Raman modes.