Performance of Cr mask for extreme-ultraviolet lithography
Performance of Cr mask for extreme-ultraviolet lithography
复制标题
极紫外光刻用Cr掩模的性能
DOI：
10.1117/12.438367
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Y. Sugie
中科院分区：
文献类型：
--
作者：
H. Nii;H. Kinoshita;Takeo Watanabe;K. Hamamoto;H. Tsubakino;Y. Sugie
最近，极紫外光刻（EUVL）成为下一代光刻（EUVL）的候选者，成为70纳米至35纳米的下一代光刻技术的候选者。该技术在厚玻璃基板上采用多层薄膜镀膜。我们提出了采用湿法工艺用于 EUVL 的 Cr 吸收掩模。 Cr吸收剂通常用作光掩模，并且由于其高极紫外（EUV）对比度和优异的化学耐久性，也被认为是作为EUVL掩模的吸收剂的有前途的材料。掩模吸收体图案通常包括0.35微米宽的线和空间(L&S)图案，该图案已完全制造完毕，且多层结构没有退化。此外，在4英寸直径晶圆的整个掩模区域成功制作了宽度小于0.15微米的精细图案。 EUVL 掩模已在 NewSUBARU 同步加速器辐射设施的光束线 BL3 处使用 EUVL 实验室工具进行了评估。清晰地复制了宽度小于 0.1 微米的线条和空间图案，还复制了宽度为 40 纳米的孤立线条图案。我们证实，使用湿法工艺的掩模吸收体图案制造工艺对于 EUVL 掩模是有用的。
Recently, extreme ultraviolet lithography (EUVL) becomes to be a candidate for the next generation lithography (EUVL) becomes to be a candidate for the next generation lithographic technology form 70 nm down to 35 nm. In this technology, multilayer films coating on the thick glass substrate is used. We have proposed the Cr absorber mask for EUVL using wet process. Cr absorber has been generally used as photomask, and been also supposed to be a promising material as absorber for EUVL mask because of its both high extreme ultraviolet (EUV) contrast and excellent chemical durability. The mask absorber pattern typically including the patterns of 0.35micrometers width lines and spaces (L&S) has been completely fabricated without degradation of the multilayer. Furthermore, the fine patterns width of less than 0.15micrometers have been successfully fabricated in the entire mask area of the 4-inch-diameter wafer. The EUVL mask has been evaluated with the EUVL laboratory tools at the beamline BL3 at the NewSUBARU synchrotron radiation facility. Line and spaces pattern width of less than 0.1micrometers are clearly replicated and isolated lines pattern width of 40nm are also replicated. We confirmed that the mask absorber pattern fabrication process using a wet process is useful for EUVL mask.