State-Space Analysis of General IMPATT Diode Small-Signal Lumped Models
State-Space Analysis of General IMPATT Diode Small-Signal Lumped Models
复制标题
通用 IMPATT 二极管小信号集总模型的状态空间分析
DOI：
10.1109/tmtt.1970.1127360
复制
发表时间：
1970
影响因子：
4.3
通讯作者：
H. R. Mitchell
中科院分区：
文献类型：
--
作者：
J. Stewart;D. Conn;H. R. Mitchell
发展了一个IMPATT二极管中小信号载流子场相互作用的集总模型，得到了一组状态方程。使用状态空间分析技术，方程求解的小信号阻抗的一般雪崩二极管作为直流偏置电流和频率的函数。读取，PN和P-I-N二极管的饱和载流子速度和载流子电离率的实际值进行了研究。给出了二极管物理特性对小信号阻抗的影响曲线。将描述外接微波电路特性的状态方程与二极管状态方程相结合，确定了同轴IMPATT振荡器的小信号振荡频率和阈值直流偏置电流。
The development of a lumped model for small-signal carrier-field interactions in an IMPATT diode results in a set of state equations. Using state-space analysis techniques, the equations are solved for the small-signal impedance of a general IMPATT diode as a function of dc bias current and frequency. Read, p-n, and p-i-n diodes are studied using realistic values for saturation carrier velocities and carrier-ionization rates. Curves indicating the influence of diode physical properties on the small-signal impedance are presented. By combining state equations describing the behavior of the external microwave circuit with the diode state equations, the small-signal oscillation frequency and threshold dc bias current of a coaxial IMPATT oscillator are determined.