Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
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压缩应变和晶格匹配的 GaInNAs/GaAs 量子阱中的激光增益和阈值特性
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
S. Kurtz
中科院分区：
文献类型：
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作者：
W. Chow;E. Jones;N. Modine;A. Allerman;S. Kurtz
利用微观激光理论计算了GaInNAs/GaAs量子威尔斯在压缩应变和晶格匹配下的光增益谱。从这些光谱，峰值增益和载流子辐射衰减率作为载流子密度的函数被确定。这些依赖关系允许不同的GaInNAs/GaAs激光器结构的激射阈值电流密度的研究。
The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GaInNAs/GaAs laser structures.