RESET Mechanism of TiOx Resistance-Change Memory Device
RESET Mechanism of TiOx Resistance-Change Memory Device
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DOI：
10.1109/led.2009.2021001
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发表时间：
2009-05
影响因子：
4.9
通讯作者：
W. Wang;S. Fujita;S.S. Wong
中科院分区：
文献类型：
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作者：
W. Wang;S. Fujita;S.S. Wong
在这封信中，复位的TiOx电阻变化存储器器件的物理机制进行了探讨单极和双极开关模式。据观察，开关参数的统计分布是非常不同的两种类型的开关模式。这些数据支持先前的证据，即导电丝（CF）的热溶解是单极复位的机制，而局部氧化还原反应是负责双极复位。研究发现，CF在单极开关过程中被破坏，但在双极开关过程中可以重复使用。
In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.