Thermoelectric probe for Fermi surface topology in the three-dimensional Rashba semiconductor BiTeI
Thermoelectric probe for Fermi surface topology in the three-dimensional Rashba semiconductor BiTeI
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DOI：
10.1103/physrevb.92.115144
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发表时间：
2015-09
影响因子：
3.7
通讯作者：
T. Ideue;Linda Ye;J. Checkelsky;H. Murakawa;Y. Kaneko;Y. Tokura
中科院分区：
文献类型：
--
作者：
T. Ideue;Linda Ye;J. Checkelsky;H. Murakawa;Y. Kaneko;Y. Tokura
我们研究了三维 Rashba 系统 BiTeI 的热电特性。塞贝克效应和能斯特效应的磁场依赖性随着费米能级通过体狄拉克点而发生质的变化，这表明热电效应可以成为费米表面拓扑的良好实验探针。在磁场下的 BiTeI 热电效应中观察到量子振荡，这也依赖于费米能级位置，并且与 Rashba 系统中三维态密度的能量导数一致。
We have investigated thermoelectric properties of a three-dimensional Rashba system BiTeI. Magnetic-field dependences of the Seebeck effect and Nernst effect show qualitative changes with the Fermi level passing through the bulk Dirac point, indicating that thermoelectric effects can be a good experimental probe for the Fermi surface topology. The quantum oscillations are observed in the thermoelectric effect of BiTeI under a magnetic field, which are also dependent on the Fermi-level positions and consistent with the energy derivative of the three-dimensional density of states in the Rashba system.