Tailored semiconductors for high-harmonic optoelectronics
Tailored semiconductors for high-harmonic optoelectronics
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DOI：
10.1126/science.aan2395
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发表时间：
2017-07-21
期刊：
影响因子：
56.9
通讯作者：
Corkum, P. B.
中科院分区：
文献类型：
--
作者：
Sivis, Murat;Taucer, Marco;Corkum, P. B.
30年前，气体中高谐波产生的出现为阿秒科学奠定了基础，并促进了原子、分子和固体的超快光谱研究。我们探索利用纳米结构和离子注入半导体在固态中产生高谐波。我们使用波长选择性显微成像来绘制增强的谐波发射，并表明通过改变化学成分和形态，可以在固体中局部定制产生介质和驱动场。这使得高谐波技术的控制精确工程固体目标。我们展示了定制的高谐波波场，波长低至225纳米（2微米激光脉冲的九次谐波），并提出了集成的菲涅耳带板硅靶，这导致产生的谐波的衍射限制自聚焦到1微米的光斑尺寸。
The advent of high-harmonic generation in gases 30 years ago set the foundation for attosecond science and facilitated ultrafast spectroscopy in atoms, molecules, and solids. We explore high-harmonic generation in the solid state by means of nanostructured and ion-implanted semiconductors. We use wavelength-selective microscopic imaging to map enhanced harmonic emission and show that the generation medium and the driving field can be locally tailored in solids by modifying the chemical composition and morphology. This enables the control of high-harmonic technology within precisely engineered solid targets. We demonstrate customized high-harmonic wave fields with wavelengths down to 225 nanometers (ninth-harmonic order of 2-micrometer laser pulses) and present an integrated Fresnel zone plate target in silicon, which leads to diffraction-limited self-focusing of the generated harmonics down to 1-micrometer spot sizes.