Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics
Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics
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DOI：
10.1063/1.2354415
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发表时间：
2006-09
影响因子：
4
通讯作者：
H. Tan;K. Kamath;Z. Mi;P. Bhattacharya;D. Klotzkin
中科院分区：
文献类型：
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作者：
H. Tan;K. Kamath;Z. Mi;P. Bhattacharya;D. Klotzkin
自组织量子点（QD）有源区的热导率估计通过测量波长啁啾与注入电流作为电流脉冲占空比的函数低于和高于阈值。使用一个分离热载流子和电荷载流子啁啾的简单模型来估计量子点活性区域的热导率。利用该模型，InGaAs量子点有源区的热导率估计为10.1W scinmK，比体材料的热导率小两个数量级。这与QD区域的热导率降低的理论预测一致。
The thermal conductivity of self-organized quantum dot (QD) active regions is estimated by measurements of wavelength chirp with injected current as a function of the current pulse duty cycle both below and above threshold. A simple model which separates out thermal and charge carrier chirps is used to estimate the thermal conductivity of the QD active region. With this model, the thermal conductivity of the InGaAs QD active region is estimated to be ∼0.1W∕mK, about two orders of magnitude less than that of the bulk material. This is consistent with theoretical predictions of the reduced thermal conductivity of QD regions.