X-band MMIC GaN power amplifiers designed for high-efficiency supply-modulated transmitters
X-band MMIC GaN power amplifiers designed for high-efficiency supply-modulated transmitters
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X 频段 MMIC GaN 功率放大器，专为高效电源调制发射器而设计
DOI：
10.1109/mwsym.2013.6697435
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
C. Campbell
中科院分区：
文献类型：
--
作者：
Scott Schafer;M. Litchfield;Andrew H. Zai;Z. Popovic;C. Campbell
介绍了采用0.15μ mGaN on SiC工艺技术的X波段功率放大器MMIC的设计和实测性能。在连续波工作条件下，这些单级和两级MMIC的峰值功率附加效率（PAE）为45%至69%，输出功率为2.5- 13 W，大信号增益高达20 dB。该功率放大器专为漏极调制应用而设计，在降低漏极偏置电压的情况下仍能保持良好的性能。当漏极偏压在7.5V ~ 20 V之间变化时，两级MMIC的输出功率可在2 W ~ 13 W之间变化，同时保持PAE大于54%。
The design and measured performance of X-band power amplifier MMICs that utilize 0.15μm GaN on SiC process technology are presented. Under continuous wave operating conditions these single and 2-stage MMICs demonstrate peak power added efficiencies (PAE) from 45% to 69%, output powers from 2.5-13W, and up to 20dB of large signal gain. Designed for drain modulated applications, the power amplifiers maintain good performance at reduced drain bias voltage. The output power of the two stage MMIC can be varied from 2W to 13W when the drain bias is varied between 7.5V and 20V while maintaining a PAE above 54%.