Fluorine-vacancy complexes in ultrashallow B-implanted Si
Fluorine-vacancy complexes in ultrashallow B-implanted Si
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DOI：
10.1063/1.2335594
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发表时间：
2006-07-31
影响因子：
4
通讯作者：
Cristiano, F.
中科院分区：
文献类型：
--
作者：
Abdulmalik, D. A.;Coleman, P. G.;Cristiano, F.
用变能正电子湮没光谱和二次离子质谱直接观察了Si中浅氟-空位（FV）配合物。FV配合物是为了对抗超浅硼的失活和瞬态增强扩散而引入的，研究人员在预晶硅晶片中观察到，在10(15)cm（-2）剂量下注入0.5 keV B和10 keV F离子，然后在800℃下等温退火，时间范围从1到2700 s。结果与模型一致，该模型预测配合物的形式为F3nVn，其中n很可能为1和/或2。(c) 2006年美国物理研究所。
Shallow fluorine-vacancy (FV) complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced diffusion of ultrashallow boron, were observed in preamorphized Si wafers implanted with 0.5 keV B and 10 keV F ions at a dose of 10(15) cm(-2), and then annealed isothermally at 800 degrees C for times ranging from 1 to 2700 s. The results are in agreement with a model which predicts that the complexes are of the form F3nVn, with n most probably being 1 and/or 2. (c) 2006 American Institute of Physics.