Polarized XAFS Analyses for MgB2 Thin Films
Polarized XAFS Analyses for MgB2 Thin Films
复制标题
DOI：
10.1007/s10948-017-3991-y
复制
发表时间：
2017-06-01
影响因子：
1.8
通讯作者：
Yoshizawa, M.
中科院分区：
文献类型：
--
作者：
Miyanaga, T.;Matsumura, R.;Yoshizawa, M.
利用分子束外延（MBE）制备的10、20和30 nm MgB2薄膜的Mg K-edge偏振x射线吸收精细结构（XAFS）分析了其局部结构，这是同步辐射源进行元素选择性结构分析的有力工具。结构参数由20 nm MgB2薄膜的扩展x射线吸收精细结构（EXAFS）分析得到。x射线近边结构（XANES）分析估计了MgO插入MgB2薄膜和ZnO衬底之间的比例。MgO比例与T (c)呈线性关系。
The local structure of 10, 20, and 30-nm MgB2 thin films prepared by molecular beam epitaxy (MBE) is analyzed by polarized X-ray absorption fine structure (XAFS) of Mg K-edge, which is a powerful tool for structural analysis with element selectivity using a synchrotron radiation source. The structural parameters are obtained from extended X-ray absorption fine structure (EXAFS) analysis for 20-nm MgB2 film. X-ray near edge structure (XANES) analysis estimated the proportion of MgO inserted between the MgB2 film and ZnO substrate. The linear relation is found between the MgO proportion and T (c).